Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Accessories supplied. BUKA Powermos Transistor: 60v, 41a. N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in. Details, datasheet, quote on part number: BUKA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK Drain-source voltage Drain current (DC).
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Typical capacitances, Ciss, Coss, Crss. Application information Where application information is given, it is advisory and does not form part of the specification.
August 6 Rev 1. Avalanche energy test circuit.
(PDF) BUK455 Datasheet download
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Avalanche datasgeet test circuit. Normalised avalanche energy rating. Exposure to limiting values for extended periods may affect device reliability. Stress above one or more of the limiting values may cause permanent damage to the device.
The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. August 7 Rev 1. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Typical reverse diode current. No liability will be accepted by the publisher for any consequence of its use. Typical reverse diode current. Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs datzsheet prevent damage to MOS gate oxide.
Normalised drain-source on-state resistance. Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad MIN.
Refer to mounting instructions for TO envelopes. Normalised continuous drain current. Normalised continuous drain current. VDD Datashfet 5 Rev 1. New Product View Product Index. August 7 Rev 1. Normalised avalanche energy rating.
Application information Where application information is given, it datashest advisory and does not form part of the specification.
Normalised drain-source on-state resistance. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Product specification This data sheet contains final product specifications.
Stress above one or more of the limiting values may cause permanent damage to the device. Philips bui455 using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 6 Rev 1. No liability will be accepted by the publisher for any consequence of its use.
BUK datasheet & applicatoin notes – Datasheet Archive
Reproduction in whole or byk455 part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. Typical turn-on gate-charge characteristics.
Refer to mounting instructions for TO envelopes. Typical capacitances, Ciss, Coss, Crss. This data sheet contains target or goal specifications for product development.